• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    TECHNICAL FIELD The present invention relates to a method of manufacturing a laser diode, and more particularly, to a technique for adjusting pad size to reduce junction capacitance. Laser diode manufacturing method for reducing the junction capacitance of the present invention comprises the steps of providing a compound laminated structure having a clad layer, which is an active layer and a current blocking layer; Performing an etching process on one side of the active stripe to form a predetermined groove; Forming an oxide film over the entirety; Forming a pattern for depositing the ohmic metal and the pad metal by a photolithography process; Depositing an ohmic metal and a pad metal in said pattern; And removing portions other than the pad and the active stripe.
    公开号:KR19980058487A
    申请号:KR1019960077812
    申请日:1996-12-30
    公开日:1998-10-07
    发明作者:강중구；정승조；김종덕；조유리；강병권
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    Laser diode manufacturing method.
    TECHNICAL FIELD The present invention relates to a method of manufacturing a laser diode, and more particularly, to a technique for adjusting pad size to reduce junction capacitance.
    In general, when manufacturing a laser diode that requires high speed, one of the speed limiting factors is junction capacitance. In order to reduce the junction capacitance, conventionally, isolation etching and pad size of the device are controlled. It was used a method such as.
    In detail, in order to reduce the P / N junction capacitance, as shown in Fig. 1A, first, n-InP layer 1, p-InP layer 2, n-InP (3), p in a known manner. After forming the P / N junction consisting of the InP layer 4 and the p-InGaAs layer 5, isolation etching is performed on both sides of the active stripe to reduce the junction capacitance.
    Then, after the oxide film 6 is deposited on the entire top, a photolithography process for forming the P-OHMIC metal and the pad is performed, and the pad metal 8 is deposited on the ohmic metal 7 and the upper portion thereof.
    However, the prior art as described above has to form a pattern for depositing an ohmic metal through a photolithography process between the isolation etched grooves, and there is a problem in that accurate pattern alignment is difficult because the width between the etched grooves is narrow. In addition, there is a problem in that the junction capacitance is increased by increasing the width between the grooves for accurate pattern alignment.
    Therefore, the present invention facilitates alignment of the ohmic metal pattern by performing isolation etching on only one side of the active stripe, and reduces the P / N junction area by etching around the active stripe and portions other than the pad after the pad metal deposition, thereby reducing the bonding. It is an object of the present invention to provide a method for manufacturing a laser diode that can effectively reduce capacitance.
    1 is a cross-sectional view for explaining a laser diode manufacturing method according to the prior art.
    2A and 2B are cross-sectional views illustrating a method of manufacturing a laser diode according to the present invention.
    * Explanation of symbols for main parts of the drawings
    11,13: n-InP layer, 12,14: p-InP, 15: p-InGaAs layer, 16: active stripe, 17: oxide film, 18: ohmic metal, 19: pad metal
    The above object is to provide a compound laminate structure having a clad layer that is an active layer and a current blocking layer; Performing an etching process on one side of the active stripe to form a predetermined groove; Forming an oxide film over the entirety; Forming a pattern for depositing the ohmic metal and the pad metal by a photolithography process; Depositing an ohmic metal and a pad metal in said pattern; And removing a portion other than the pad and the active stripe, by the method of manufacturing a laser diode according to the present invention.
    According to the present invention, since isolation etching is performed only on one side of the active stripe, it is possible to facilitate pattern alignment for forming an ohmic metal, and by reducing the P / N junction area, it is possible to effectively reduce the junction capacitance.
    EXAMPLE
    Hereinafter, the present invention will be described in more detail with reference to FIGS. 2A and 2B.
    Referring to FIG. 2A, an n-InP layer 11, a p-InP layer 12, and an n-InP layer 13 may be formed by performing a first growth, an etching process using a non-selective etching solution, and a second and third growth. ), the p-InP layer 14 and the p-InGaAs layer 15 are formed. Then, isolation etching is performed on one side of the active stripe 16 to reduce the junction capacitance.
    Then, an oxide film 17 is deposited on the entire upper portion, and a pattern (not shown) for depositing a predetermined width of the ohmic metal and the pad metal is formed by a photolithography process, and then on the ohmic metal 18 and the upper portion thereof. The pad metal 19 is deposited. Here, since the isolation etching is carried out only on one side of the active stripe 16, misalignment of the mask due to the fine pattern width can be prevented as in the prior art.
    Referring to FIG. 2B, portions other than the pad and the active stripe 16 are removed by wet etching using selective or non-selective etching solutions.
    Then, a known subsequent process is carried out to produce a laser diode.
    As described above, the laser diode manufacturing method of the present invention can reduce the junction capacitance by reducing the P / N junction area, thereby improving the reliability and characteristics of the laser diode that requires high speed.
    Meanwhile, although specific embodiments of the present invention have been described and illustrated, modifications and variations can be made by those skilled in the art. Accordingly, the following claims are to be understood as including all modifications and variations as long as they fall within the true spirit and scope of the present invention.
    权利要求:
    Claims (2)
    [1" claim-type="Currently amended] Providing a compound stack structure having a clad layer that is an active layer and a current blocking layer;
    Performing an etching process on one side of the active stripe to form a predetermined groove;
    Forming an oxide film over the entirety;
    Forming a pattern for depositing the ohmic metal and the pad metal by a photolithography process;
    Depositing an ohmic metal and a pad metal in said pattern; And
    And removing portions other than the pad and active stripe.
    [2" claim-type="Currently amended] The method of claim 1, wherein the etching is performed using one of a selective and non-selective etching solution to remove portions other than the pad and the active stripe.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1996-12-30|Application filed by 김영환, 현대전자산업 주식회사
    1996-12-30|Priority to KR1019960077812A
    1998-10-07|Publication of KR19980058487A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019960077812A|KR19980058487A|1996-12-30|1996-12-30|Laser diode manufacturing method|
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